SVMW100 Solid-State Remote Microwave Plasma Source

SVMW100 固态远程微波等离子体源

2.45 GHz solid-state microwave remote plasma source — neutral radical output with nearly no ion bombardment, zero wafer charging and low device damage.

2.45 GHz 固态微波远程等离子体源——以中性活性自由基输出为主，几乎无离子轰击、零晶圆充电、器件损伤低。

Overview产品概述

Remote plasma with clean, low-damage output

远程等离子体，洁净低损伤输出

In the SVMW100, plasma is excited in a standalone source chamber. Ions and electrons decay along the transport path, so when the output reaches the process chamber it is dominated by neutral active radicals. This delivers nearly no ion bombardment, zero wafer charging and low device damage — making the SVMW100 essential dry-processing equipment for semiconductor, advanced packaging, compound-semiconductor and MEMS applications.

SVMW100 的等离子体在独立源腔中激发，离子与电子在传输路径上衰减，到达工艺腔室时输出以中性活性自由基为主。由此实现几乎无离子轰击、零晶圆充电与低器件损伤——是半导体、先进封装、化合物半导体与 MEMS 应用的关键干法处理设备。

The compact solid-state design is easy to install and operates from single-phase 220 V AC. It is mainly applied to oxidation and nitridation processes for ALD equipment, as well as reaction synthesis for scientific research instruments.

紧凑的固态设计便于安装，单相 220 V AC 供电。主要应用于 ALD 设备的氧化与氮化工艺，以及科研仪器的反应合成。

✓ 2.45 GHz solid-state remote microwave plasma source, 0 – 500 W
✓ 2.45 GHz 固态远程微波等离子体源，0 – 500 W
✓ Nearly no ion bombardment · zero wafer charging · low damage
✓ 几乎无离子轰击 · 零晶圆充电 · 低损伤
✓ NF₃ dissociation rate > 99%
✓ NF₃ 解离率 > 99%
✓ For ALD oxidation / nitridation and scientific reaction synthesis
✓ 适用于 ALD 氧化 / 氮化与科研反应合成

Applications典型应用

Where the SVMW100 is used

应用领域

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ALD Oxidation / Nitridation

ALD 氧化 / 氮化

Low-damage oxidation and nitridation processes for ALD equipment.

面向 ALD 设备的低损伤氧化与氮化工艺。

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Semiconductor & Advanced Packaging

半导体与先进封装

Dry processing for semiconductor, advanced packaging, compound-semiconductor and MEMS.

半导体、先进封装、化合物半导体与 MEMS 的干法处理。

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Scientific Reaction Synthesis

科研反应合成

Reaction synthesis for scientific research instruments.

用于科研仪器的反应合成。

Specifications技术规格

Technical specifications

技术规格

Parameter	参数	Specification	规格
Microwave Frequency	微波频率	2.45 GHz	2.45 GHz
Rated Power	额定功率	0 – 500 W	0 – 500 W
Voltage	供电电压	Single-phase 220 V	单相 220 V
NF₃ Dissociation Rate	NF₃ 解离率	> 99%	> 99%
Operating Vacuum	工作真空度	0.01 Pa – 10 Torr	0.01 Pa – 10 Torr
Gas Flow Rate	气体流量	20 – 1000 sccm	20 – 1000 sccm
Process Gas	工艺气体	NF₃, O₂, N₂, H₂, F₂, CF₄, SF₆	NF₃、O₂、N₂、H₂、F₂、CF₄、SF₆
Inert Gas	惰性气体	N₂, Ar, He	N₂、Ar、He
Tube Material	管材	Sapphire (F-containing) / Quartz (F-free)	蓝宝石（含 F 工艺）/ 石英（无 F 工艺）
Cooling Water Flow	冷却水流量	1 – 4 L/min	1 – 4 L/min
Cooling Water Pressure	冷却水压力	2 – 4 bar	2 – 4 bar
Process Port	工艺接口	KF25 flange	KF25 法兰
Gas Inlet	进气接口	1/4 VCR or compression fitting	1/4 VCR 或卡套接头